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  • From 6F² to 4F²: CXMT’s New DRAM Breakthrough Targets Server DDR5 RDIMM Market

    Changxin Memory Technologies (CXMT) is expected to launch a new generation of DDR5 RDIMM products by the end of this year, a message revealed by Cao Kanyu, President of CXMT, at the recently held 4th Integrated Circuits and Chiplets Conference. Cao Kanyu delivered a speech at the conference, comprehensively introducing the technological exploration and accumulation of CXMT in DRAM devices, the 4F² architecture, and hybrid bonding, and officially announced that the new generation of DDR5 RDIMM pr

    October 12, 2026

    From 6F² to 4F²: CXMT’s New DRAM Breakthrough Targets Server DDR5 RDIMM Market
  • MRAM Reshapes High-Reliability Industrial Storage: HikStor’s Mass Production Breakthrough

    Author: Peng Cheng Industrial storage is a low-key yet critical niche market in the semiconductor industry. Unlike consumer-grade storage, which prioritizes capacity and cost, industrial storage focuses more on reliability, such as 24/7 continuous operation, wide-temperature environments from -40 to 125°C, strong vibration and electromagnetic interference, and frequent unexpected power outages. These operating conditions dictate that industrial equipment cannot directly adopt consumer-grade stor

    October 12, 2026

    MRAM Reshapes High-Reliability Industrial Storage: HikStor’s Mass Production Breakthrough
  • Korea Semiconductor Industry Association Quantifies China-South Korea Memory Tech Gap: NAND ~1Y, DRAM ~2Y, HBM ~3Y

    Korea Semiconductor Industry Association Releases Report First Quantification of the Technology Gap Between China and South Korea Approximately 1-Year Gap in NAND Approximately 2-Year Gap in DRAM Approximately 3-Year Gap in HBM On September 15, a report released by the Korea Semiconductor Industry Association pointed out that the technology gap between China and South Korea in the memory chip field has narrowed from the previously assessed "over 5 years" to about "one generation." The gap in NAN

    October 10, 2026

    Korea Semiconductor Industry Association Quantifies China-South Korea Memory Tech Gap: NAND ~1Y, DRAM ~2Y, HBM ~3Y
  • DapuStor’s H-Share Plan 130 Days After ChiNext Listing: Racing Against the 5-Year Enterprise SSD Technology Clock

    From its listing on the ChiNext board on April 16 to the announcement of planning an H-share issuance on the evening of August 24, only 130 days passed. The market's initial reaction was almost reflexive: Is it short of cash? But if you know that developing a complete enterprise SSD controller chip + firmware + product validation, from project initiation to mass production, takes over 5 years—you might change your perspective. What they are rushing for is not money, but time. 130 Days: The Marke

    October 8, 2026

    DapuStor’s H-Share Plan 130 Days After ChiNext Listing: Racing Against the 5-Year Enterprise SSD Technology Clock
  • KV Cache Externalization: The Hidden Cost of Letting Large Models "Remember"

    AI inference KV caches are now large enough to need dedicated storage, as seen with Huawei M900 and NVIDIA CMX. Offloading reusable KVs from DRAM to SSDs trades storage cost for less recomputation, but 1TB DRAM does not equal 1TB SSD; solutions may need 1:N SSD capacity. SSD standards remain fragmented. Externalization mainly eases DRAM, not HBM, while data movement costs persist; CIM may help Prefill. The real cost depends on KV lifetime, reuse, media, and retrieval.

    October 8, 2026

    KV Cache Externalization: The Hidden Cost of Letting Large Models "Remember"
  • NOR Flash Industry Reshuffling: AI & Automotive Electronics Fuel High-Capacity Price Surge and Tech Breakthroughs

    Author: Peng Cheng Recently, frequent news has emerged from the NOR Flash market. Market research firm TrendForce released a forecast: with limited capacity expansion for NOR Flash, prices for high-capacity products are expected to rise by another 90% to 110% in the second half of the year, and prices for some models may directly double. The root cause of this round of price increases stems from the concentrated explosion of demand in the AI server and automotive electronics markets. At almost t

    October 8, 2026

    NOR Flash Industry Reshuffling: AI & Automotive Electronics Fuel High-Capacity Price Surge and Tech Breakthroughs
  • Longsys Unveils iSA Intelligent Storage Agent, Enabling 30B MoE Large Models to Run on Smartphones

    In recent years, the competition among smartphone manufacturers in AI has basically revolved around a few familiar aspects: model parameters, NPU computing power, and on-device deployment capabilities. Especially in the current era where on-device AI is becoming ubiquitous, AI has become one of the "must-have" features for smartphones. However, as smartphone AI capabilities continue to strengthen, new problems have emerged: chips have greater computing power, and models need to process more data

    October 5, 2026

    Longsys Unveils iSA Intelligent Storage Agent, Enabling 30B MoE Large Models to Run on Smartphones
  • AI “Memory Tax”: HBM Capacity Crunch Drives Price Hikes for Phones, PCs and Automobiles

    Have you noticed? If you want to change your smartphone recently, the model you like costs hundreds of CNY more than last month; if you are preparing to build a PC, the total price for the same configuration list has increased significantly; if you go to a 4S dealership to check out cars, the salesperson says chip costs have risen and discounts have narrowed. Smartphones, PCs, and cars—three seemingly unrelated industries—are being pushed to raise prices by the same force. This force comes from

    September 30, 2026

    AI “Memory Tax”: HBM Capacity Crunch Drives Price Hikes for Phones, PCs and Automobiles
  • CXMT Unveils G5 DRAM & 24Gb LPDDR5X, LPDDR6 World’s First Launch Built on This Platform

    On September 20, ChangXin Memory Technologies (CXMT) announced the mass production of its 5th-generation DRAM technology platform (G5) at the 2026 World Manufacturing Convention, simultaneously showcasing two 24Gb LPDDR5X products based on this platform. The four key figures provided by the company are: an active area half-pitch of 11.95nm, a capacitor aspect ratio of 45:1, a core functional area height of 6762nm, and at least a 50% increase in die per wafer (DPW) compared to the previous genera

    September 21, 2026

    CXMT Unveils G5 DRAM & 24Gb LPDDR5X, LPDDR6 World’s First Launch Built on This Platform
  • Winbond’s $1.12B Acquisition of Infineon NOR Flash & F-RAM: NOR Price Rally & F-RAM Automotive Growth

    On the evening of September 16, Winbond Electronics announced the acquisition of 100% equity in Infineon's NOR Flash and F-RAM businesses in an all-cash deal. This transaction has pushed the two memory products, NOR Flash and F-RAM, back to the center of market attention. Driven by the AI boom and the automotive market, these two previously somewhat subdued memory products are expected to embark on a new growth cycle. Winbond Electronics Acquires Infineon's Memory Business for USD 1.12 Billion W

    September 19, 2026

    Winbond’s $1.12B Acquisition of Infineon NOR Flash & F-RAM: NOR Price Rally & F-RAM Automotive Growth
  • Beyond High Throughput: AI Storage Competition Shifts to Full-Process Workloads Covering Training and KV Cache Inference

    Author | Yang Jingli, Editor | Li Shuiqing According to a report by Zhidx on September 17, on September 1, MLCommons, the global authoritative AI performance evaluation organization, released the MLPerf Storage v3.0 benchmark leaderboard. The YanRong All-Flash AI Storage F9000X secured first place in multiple benchmark tests, fully validating its highly efficient utilization capability of high-speed network bandwidth under extreme AI training workloads. As the AI industry shifts from model train

    September 18, 2026

    Beyond High Throughput: AI Storage Competition Shifts to Full-Process Workloads Covering Training and KV Cache Inference
  • Winbond to Buy Infineon’s NOR Flash & F-RAM Business for $1.12B, Reviving the Spansion Brand

    On the evening of September 16, the semiconductor industry announced a major acquisition. Winbond Electronics, a memory manufacturer from China's Taiwan region, held a press conference for significant information. The board of directors of Winbond Electronics passed a resolution to sign a share purchase agreement with Infineon Technologies LLC, a subsidiary of Infineon, to acquire 100% equity of its NOR Flash and F-RAM (Ferroelectric Random Access Memory) business in an all-cash transaction. The

    September 18, 2026

    Winbond to Buy Infineon’s NOR Flash & F-RAM Business for $1.12B, Reviving the Spansion Brand
  • Winbond Buys Infineon’s NOR Flash & F-RAM Business for USD1.12B, Reviving the Spansion Brand

    On the evening of September 16, Winbond Electronics held a press conference to announce that it has signed a share purchase agreement with Infineon Technologies LLC, a subsidiary of Infineon Technologies AG, to acquire 100% equity in Infineon's NOR Flash and F-RAM business (hereinafter referred to as the "Target Company") in an all-cash transaction. The base transaction price is USD 1.12 billion, which will be adjusted prior to closing in accordance with the relevant provisions stipulated in the

    September 17, 2026

    Winbond Buys Infineon’s NOR Flash & F-RAM Business for USD1.12B, Reviving the Spansion Brand
  • USD 1.12 Billion to Revive Spansion: Winbond Bets on NOR Flash in the AI Era

    On the evening of September 16, Winbond Electronics Corporation (hereinafter referred to as "Winbond") held a press conference to announce that it has signed a share purchase agreement with Infineon Technologies LLC, a subsidiary of Infineon Technologies AG, to acquire 100% equity of Infineon's NOR Flash and F-RAM businesses in an all-cash transaction. The base transaction price is USD 1.12 billion, subject to adjustments according to relevant provisions of the agreement prior to closing. The tr

    September 16, 2026

    USD 1.12 Billion to Revive Spansion: Winbond Bets on NOR Flash in the AI Era
  • The Next Decade of DRAM: Time to "Stand Up"

    Author: Feng Ning In the first week of September 2026, two pieces of news invigorated the entire memory chip industry. 01. 3D DRAM: A Clash of Giants Recently, at an internal technical seminar, AMD disclosed exciting experimental data: a 3D DRAM architecture based on Hybrid Bonding technology can improve energy efficiency by up to 17 times compared to traditional HBM stacks. This means that under the same power consumption, data transmission efficiency can achieve an order-of-magnitude leap. Alt

    September 15, 2026

    The Next Decade of DRAM: Time to "Stand Up"
  • The Memory Supercycle: Apple’s Uncapped NAND Contract Signals a Seller’s Market

    Recently, a rumor regarding flash memory has drawn market attention. According to reports cited by Jiemian News, Apple has recently signed a Long-Term Agreement (LTA) with a NAND flash memory supplier, with the specific supplier, volume, and pricing terms remaining undisclosed. Market insiders believe that Japan's Kioxia might be the counterparty. Other sources suggest the agreement could span 3 to 5 years and may not include a price cap, though these details have not been officially confirmed.

    September 14, 2026

    The Memory Supercycle: Apple’s Uncapped NAND Contract Signals a Seller’s Market
  • Research Report | Memory Contract Prices Continue to Surge, Estimated to Account for Up to 68% of Major CSPs' Capital Expenditure in 2027

    Aug. 25, 2026 Industry Insights According to TrendForce's latest memory industry research, to accelerate the construction of AI infrastructure, the capital expenditure of major global cloud service providers (CSPs) is projected to increase by 98% year-over-year in 2026 and grow by another 50% in 2027. This substantial growth is partly attributable to the sharp surge in memory contract prices and the strong growth in procurement demand. TrendForce estimates that the combined share of DRAM and NAN

    August 26, 2026

    Research Report | Memory Contract Prices Continue to Surge, Estimated to Account for Up to 68% of Major CSPs' Capital Expenditure in 2027
  • Memory Giants Unveil Latest Technology Roadmaps: Where is the Next Stop for HBM?

    The AI wave continues to sweep across the global semiconductor industry. As the core cornerstone of AI computing power, the technological development and breakthroughs of HBM directly concern the future AI competitive landscape. At the recently held Hot Chips 2026 conference, the three major memory giants—Samsung, SK Hynix, and Micron—appeared on the same stage, each unveiling their latest insights and technological directions in the HBM field. 01. Samsung Unveils zHBM: DRAM Stacked Directly on

    August 26, 2026

    Memory Giants Unveil Latest Technology Roadmaps: Where is the Next Stop for HBM?
  • Giantec Semiconductor: A Veteran in Memory, a Newcomer in AI

    Amid the fluctuations of the semiconductor cycle, memory chips are undoubtedly one of the most resilient sectors. Following the impressive results delivered by industry leaders, Giantec Semiconductor, another STAR Market-listed company deeply engaged in the NOR Flash field, has achieved a remarkable leap in performance in the first half of 2026, leveraging the industry tailwinds and its own strategic layout. From Loss to 140 Million RMB in Profit On August 25, the 2026 semi-annual report release

    August 26, 2026

    Giantec Semiconductor: A Veteran in Memory, a Newcomer in AI
  • Behind Puya Semiconductor’s Explosive H1 2026 Financials: SONOS + ETOX Dual NOR Flash Platforms and SHM Acquisition Build System-Level Memory Capabilities

    In the first half of 2026, Puya Semiconductor achieved a revenue of 3.959 billion RMB, a year-on-year increase of 336.67%; its net profit attributable to shareholders reached 827 million RMB, surging by 1929.65% year-on-year; and its gross profit margin climbed to a historical peak of 51.15%. As an engineer who has long focused on semiconductor processes and design, I prefer to look beyond the shell of this financial report and see what lies behind the numbers. Dual Process Platforms: SONOS + ET

    August 19, 2026

    Behind Puya Semiconductor’s Explosive H1 2026 Financials: SONOS + ETOX Dual NOR Flash Platforms and SHM Acquisition Build System-Level Memory Capabilities

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