United Nova Power (UNP) recently announced the completion of its Series C funding round, raising nearly CNY 2 billion. This round was led by China Mobile's Chain Leader Fund, with participation from grid central enterprises, IEIT SYSTEMS, Yuanjing Capital, Sinopec Hydrogen Energy Fund, Naura Technology Nuohua Capital, Jiangfeng Electronics, Changzhou Xingyu, Kaihui Fund, Jianxin Equity, CITIC Jinshi, and other industrial and financial investment institutions. The funds will be used to expand production lines for silicon carbide (SiC) and gallium nitride (GaN) power devices, develop high-voltage products, and focus on expanding business into AI data center power supply solutions.
#UnitedNovaPower (registration entity: United Nova Power Technology (Shaoxing) Co., Ltd.) is a controlled subsidiary of #UnitedNovaTechnology (UNT), established in October 2023. It is positioned as a one-stop solution provider for automotive-grade SiC manufacturing and module packaging. Its main businesses include R&D, wafer manufacturing, and power module packaging for SiC and GaN compound semiconductor chips. It owns China's first8-inch SiC MOSFET production line. Early core business focused on automotive high-voltage power scenarios such as new energy vehicle (NEV) main drives and onboard chargers, achieving mass production and delivery of automotive-grade SiC modules.
Reviewing its financing history, UNP has completed multiple rounds within three years since its establishment. In November 2024, it completed its first major capital increase, with institutions like Xiaomi Manufacturing Intelligence Fund and SDIC Investment joining; funds were primarily used for 8-inch SiC production line construction and automotive product validation. In August 2025, it completed a second capital increase involving CICC Capital, CITIC Jinshi, and others. In January 2026, Yuxin Electronic Science's Information Industry Fund completed a strategic capital increase, coordinating computing power and grid industry chain resources.
Notably, the lineup of investors in this round has changed significantly compared to previous rounds. Early shareholders were mainly automotive and new energy industrial capital, while this round added industrial players from telecom operators, servers, grids, and semiconductor equipment/materials sectors, corresponding to the company's plan to open up a second growth curve in AI computing power supply.
Leveraging the high-voltage and high-frequency characteristics of SiC and GaN devices, UNP is developing power devices for AI data center 800V high-voltage DC power supply and Solid-State Transformers (SST). Currently, it covers full voltage range SiC products from 650V to 3300V. Among them,3300V SiC MOSFET devices have been sent to core customers for validation, while higher voltage grade products are still in the R&D stage.
On the industrial side, the company's 6-inch SiC production line achieved stable mass production relatively early. Samples from the 8-inch SiC production line were delivered in Q4 2024, entering scaled mass production in 2025, with automotive-grade SiC modules achieving batch installation in vehicles. In the first half of 2026, the company's revenue reached CNY 1.182 billion, a year-on-year increase of approximately 106%. During the same period, it launched and sent samples of 3300V SiC MOSFETs for validation. The track has expanded from the original NEV main drive to scenarios such as AI server high-voltage DC power supply, industrial power supplies, and grid SSTs. Simultaneously, it is laying out GaN power device development covering fast charging, industrial power supplies, and other scenarios.
The computing density per rack of AI computing servers continues to rise, with rack power consumption increasing steadily. Some high-end AI racks have exceeded tens of kilowatts in power consumption. Traditional 48V low-voltage DC power supply architectures generate significant line losses under high current transmission, leading to increased copper cable wiring costs and heat dissipation pressure.
800V High-Voltage Route: Collective Validation Across the Industry Chain
Against this backdrop,800V high-voltage DC power supply solutions and Solid-State Transformer (SST) solutions have become key areas for industry exploration. Compared to traditional power frequency transformers, SSTs rely on power semiconductor devices for energy conversion, offering smaller size, higher power density, and flexible voltage regulation. SiC devices, with their lower conduction loss, higher switching frequency, and higher voltage resistance characteristics, are the core power components in800V high-voltage DC and SST solutions.
Across the industry chain, from chip manufacturers to system integrators, all are simultaneously advancing the validation of this technology route.
#SananOptoelectronics relies on its mature SiC device production line to continuously supply server power customers. Products are primarily adapted for high-voltage conversion links within computing power supplies, initially entering the 800V power supply system through relatively easier-to-implement power modules.
#YOFCAdvancedSemiconductor targets the demand for high-voltage resistant devices in SSTs, building a 2300V to 3300V SiC MOSFET process platform. These high-voltage devices can directly adapt to grid-side voltage levels, bridging the high-voltage transformation link from the grid to the data center.
#CRMicroelectronics adopts a phased validation rhythm. SiC devices for computing power supplies have entered customer evaluation stages, while devices supporting SSTs have achieved small-batch supply, balancing short-term power order needs with medium-to-long-term SST R&D reserves.
System manufacturers are also synchronously implementing prototypes and products.
#WeiguangEnergy shipped its Helios 2.0 SST product in October. The complete machine adapts to the800V DC architecture of intelligent computing centers, focusing on solving efficiency issues of internal voltage transformation in data centers, leaning towards internal distribution retrofitting scenarios.
#TBEA released its Ruiyu series SST around the same time and announced mass production. The complete machine adopts an all-SiC device solution, capable of directly converting 10kV AC to 800V DC, bridging the primary transformation from grid-side high voltage to computing power rooms. This is a core device connecting the grid and computing power hubs.
Overseas manufacturers are also advancing supporting layouts. #Infineon announced a partnership with Eaton in September, where Infineon provides SiC power devices to support Eaton's medium-voltage SST platform development, targeting overseas data center and grid infrastructure markets.
#Wolfspeed partnered with #LiteOn, where Wolfspeed provides SiC devices to cooperate with LiteOn in developing next-generation server power supplies adapted to the 800VDC architecture.
Overall,800V high-voltage DC and SSTs remain in the pilot validation stage. Long-term device reliability, total cost of ownership, and distribution standards are still being refined, indicating some distance remains before large-scale commercialization.
Compiled by TrendForce Compound Semiconductor