Recently, multiple projects across the silicon carbide (SiC) industry chain have witnessed new progress:
SuperSiC: The Ningxia 600,000-piece 8-inch SiC substrate project is about to complete the installation of all equipment;
XJTU: The SiC module packaging platform is about to be put into use, with domestic equipment to be procured;
Jingfei Semiconductor: Investing CNY 20 million to build a production base for SiC laser lift-off equipment;
Suzhou Haojing: The SiC crystal growth furnace project has been signed and settled in Suzhou.
SuperSiC: Progress Updated for the Ningxia 600,000-Piece SiC Substrate Project
On September 8, the Management Committee of the Yinchuan Economic and Technological Development Area in Ningxia released a report on the latest progress of the local 8-inch SiC substrate production line.
According to the report, the site of Chuangsheng New Materials' "Annual Production of 600,000 8-inch SiC Substrate Wafers and Supporting Crystal Project" is undergoing intensive equipment installation and commissioning.
Chuangsheng New Materials is a wholly-owned subsidiary of Zhejiang Jingrui SuperSiC Electronic Materials Co., Ltd. (SuperSiC). The total investment for the aforementioned project is CNY 5.6 billion. The construction commenced with a groundbreaking ceremony on July 20, 2025, and the construction period is two years.
According to a person in charge at Ningxia Chuangsheng New Materials Technology Co., Ltd., more than 300 units of equipment have been installed for the project so far, and the remaining equipment is expected to arrive in full by early October.
SuperSiC's SiC layout follows a model of "one industry chain, multi-location division of labor," accelerating the production of 900,000 6-inch and 8-inch substrate wafers annually. Among these, the Ningxia base is responsible for front-end crystal growth, while the bases in Shaoxing, Zhejiang, and Penang, Malaysia, handle the back-end slicing, grinding, and polishing of the substrate wafers.
Regarding the Shaoxing base, in November 2023, its "Annual Production of 250,000 6-inch and 50,000 8-inch SiC Substrate Wafers Project" completed the public notice for the proposed approval of the environmental impact assessment. Subsequently, in June 2025, SuperSiC further filed an annual production line project for slicing, grinding, and polishing of 600,000 8-inch SiC substrate wafers, with a total investment of CNY 1.5 billion, planned to be completed by June 2027.
As for the Penang base, in July 2025, the "Phase I Project for the Annual Production of 240,000 8-inch SiC Substrates" broke ground, and is expected to commence production by the end of 2026.
XJTU: SiC Module Platform to Be Put into Use, Equipment to Be Procured
On September 15, the Tongyue Wide Bandgap Semiconductor Research Institute of Xi'an Jiaotong University (XJTU) in Shaoxing released a statement announcing that their SiC module is nearing completion and will soon be put into use.
According to the introduction, the research institute operates the "Research Platform for High-Performance Packaging and Integration of Wide Bandgap Power Semiconductors," focusing on the R&D and production of SiC modules. It centers on high-voltage packaging, high-temperature packaging materials, and packaging structure optimization, aiming to achieve breakthroughs in core technologies such as low parasitic inductance, high thermal conductivity, and high reliability.
Recently, the platform has achieved multiple milestones: indoor renovation is 95% complete, and wastewater and exhaust gas treatment equipment is being simultaneously installed and commissioned. The platform is sprinting towards operation in a "countdown" status.
The research institute stated that the platform project will next procure key packaging equipment such as high-precision die bonders and vacuum reflow ovens, with the localization rate of the equipment being no less than 50%. Upon completion, the platform will be capable of packaging pilot runs, small-batch customization, testing and certification, and reliability verification.
Jingfei Semiconductor: Investing CNY 20 Million to Build SiC Equipment Base
On September 17, the Management Committee of the Tianjin Economic-Technological Development Area released a report introducing the laser lift-off equipment production base project of Beijing Jingfei Semiconductor.
According to the report, Jingfei Semiconductor recently registered and established "Tianjin Jingfei Semiconductor Technology Co., Ltd." in the Tianjin Economic-Technological Development Area to build a high-end laser lift-off equipment production base. The main products of this project include SiC laser lift-off equipment and diamond laser lift-off equipment.
The investment for this project amounts to CNY 20 million. It is expected that plant renovation and reconstruction will begin in October 2026, equipment will be moved in by the end of the year, and formal production will commence in the first half of 2027.
Suzhou Haojing: SiC Crystal Growth Furnace Project Signed and Settled in Suzhou
On September 11, according to the Suzhou Yuanchuang Zhigu Digital Economy Industrial Park, an SiC crystal growth equipment enterprise has signed an agreement to settle in the industrial park.
The enterprise settling in is Suzhou Haojing Vacuum Semiconductor Equipment Co., Ltd., whose main products include SiC crystal growth equipment and 12-inch SiC ingots.
Suzhou Haojing was established in January 2026, with shareholders including Wang Huafei, Cai Junyi, Zou Huijun, and Li Jiahong. In September 2026, the listed company Yuanli Technology (603217.SH) made a strategic investment in it, acquiring a 51% stake, making Suzhou Haojing a controlling subsidiary of Yuanli Technology.
According to the introduction, Suzhou Haojing has accumulated extensive R&D experience in semiconductor equipment, with clients covering industry giants such as TSMC and Foxconn. The core components of the company's front-opening PVT resistive crystal growth furnace have achieved 100% localization, and the ingot yield rate can reach over 85%. Its core product, the SiC resistive furnace, possesses multiple patented technologies, including a surge current guiding circuit, a closed-loop temperature control system, and a specially designed graphite heater.
This article is published by Expert Insights on Third-Generation Semiconductors, focusing on industry observations of the third-generation semiconductor (SiC and GaN) sector.