Recently, another four silicon carbide (SiC) projects in China have accelerated, with a total investment exceeding CNY 1.5 billion:
Galaxy Microelectronics: Investing CNY 1.078 billion to build a high-end device project, which will produce SiC devices and other products;
Changjing Technology: Investing over CNY 200 million in the "MOSFET, IGBT, and Third-Generation Semiconductor Technology R&D Project";
Titan Future: Work such as plant decoration and core equipment procurement for the SiC substrate project is advancing in an orderly manner;
Gengyun Electric: With a total investment of CNY 300 million, it is used to build an SiC crystal growth equipment project.
Galaxy Microelectronics: Investing Over CNY 1 Billion to Expand Device Capacity
On September 22, Changzhou Galaxy Century Microelectronics Co., Ltd. released the "Announcement on Investing in the Industrialization of High-End Core Devices and the Construction of Innovation Capability Projects".
Galaxy Microelectronics stated that to improve the production, processing, and manufacturing capabilities of IC discrete device products and expand the production scale of IC discrete device products, it plans to invest CNY 1.078 billion of its own or self-raised funds to implement the project. The expected start time is January 2027, with a construction period of three years.
The document further revealed that the products involved in this project mainly include SGT MOS, super-junction MOS, IGBT and modules, SiC devices, IPM modules, and automotive-grade TVS/ESD, etc. Different from traditional consumer small-signal diodes and ordinary low-voltage planar devices, they adopt chip structures such as SGT/SJ, IGBT, and SiC/GaN. Having passed high-reliability certifications such as AEC-Q101, they will produce power discrete devices and third-generation semiconductor devices with low loss, high ESD/avalanche resistance, and long lifespan for high-threshold scenarios such as NEVs, energy storage, and industrial applications.
It is understood that in July 2025, Galaxy Microelectronics planned to invest CNY 310 million of its own funds in Changzhou, Jiangsu, to implement the "Phase I Plant Construction Project of the High-End IC Discrete Device Industrialization Base" as a preliminary project, mainly completing infrastructure such as land acquisition and plant civil engineering. The current project will mainly implement decoration and renovation, equipment procurement and installation, production line debugging, and customer verification based on the Phase I plant.
Changzhou Galaxy Century Microelectronics Co., Ltd. is an enterprise focusing on the R&D of semiconductor devices, chip design and manufacturing, packaging and testing, sales, and services. It was listed on the Shanghai Stock Exchange on January 27, 2021. It possesses integrated operation capabilities under the IDM model, and its products cover power device chips, MOSFETs, IGBTs, SiC devices, GaN devices, and analog ICs.
According to Galaxy Microelectronics' 2026 semi-annual report, its automotive SiC MOSFET modules have entered the stage of sample submission for testing, customer verification, and industrialization process debugging. GaN devices are also simultaneously carrying out technical pre-research and sample development.
Changjing Technology: Deploying Third-Generation Semiconductor Technology R&D Projects
On September 20, Changjing Technology officially submitted its prospectus, planning to be listed on the Main Board of the Shenzhen Stock Exchange. According to the prospectus, Changjing Technology plans to raise CNY 1.4904 billion to build projects such as "MOSFET, IGBT, and Third-Generation Semiconductor Technology R&D".
Among them, the "MOSFET, IGBT, and Third-Generation Semiconductor Technology R&D Project" will be constructed at Changjing Technology's existing site, with a construction period of 4 years and a total investment of CNY 231.9 million.
The project will purchase advanced R&D and testing equipment, introduce relevant professional personnel, improve and upgrade existing R&D-related supporting infrastructure resources, and carry out in-depth technical R&D around directions such as "wide-bandgap SiC process platform development and component product technology R&D" and "wide-bandgap GaN component technology R&D".
Changjing Technology is a comprehensive semiconductor enterprise operating in parallel with Fabless and IDM models. Its main products cover various semiconductor products such as discrete devices like SiC SBDs, MOSFETs, and IGBTs, PMICs, and discrete device wafers. From 2023 to 2025, Changjing Technology's operating revenues were CNY 2.26 billion, CNY 2.678 billion, and CNY 2.985 billion, respectively.
Changjing Technology stated that by deploying the "MOSFET, IGBT, and Third-Generation Semiconductor Technology R&D Project", they will further expand the company's technical application capabilities in the fields of high-end discrete devices and PMIC products, advance the "platformization" strategy, and horizontally broaden product boundaries.
Titan Future: SiC Substrate Project Advancing in an Orderly Manner
On September 20, according to the official WeChat account of "Jinhu Release", Titan Future's silicon carbide substrate project won the first prize in the 2026 Huai'an Innovation and Entrepreneurship Competition.
It is reported that this project focuses on high-performance silicon carbide and tantalum carbide coating series products for semiconductors. Multiple processes have achieved key breakthroughs, significantly improving material preparation efficiency and product performance. At present, work such as capital investment, plant decoration, and core equipment procurement is advancing in an orderly manner. After being put into production, it will effectively make up for the regional third-generation semiconductor material industry chain links and empower the semiconductor industry to improve quality and upgrade.
The official account revealed that Titan Future has achieved the localization of 6-inch and 8-inch Poly-SiC substrates and launched the first 12-inch large-size polycrystalline silicon carbide substrate, which is suitable for high-end applications such as AI advanced packaging heat dissipation substrates, SiC epitaxial substrates, crystal growth carrier plates, and high-temperature process heat dissipation.
Gengyun Electric: SiC Equipment Project Has Commenced Construction
On September 20, according to Xinhua Daily, recently, many places in Jiangsu have continued to exert efforts around project construction, industrial upgrading, and innovation ecology. A batch of projects have been signed and landed, commenced construction and topped out, and put into production and mass production, including a silicon carbide project.
The article revealed that on September 13, the core components and semiconductor key equipment project located in Wujin District, Changzhou, officially commenced construction. With a total investment of CNY 300 million and a total construction area of about 20,956 square meters, it will build modern standard plants, intelligent R&D centers, and professional testing laboratories to high standards, creating an industrial development pattern of "one base and two centers".
The project is constructed by Changzhou Gengyun Electric Appliance Co., Ltd. Led by a doctoral team from Tsinghua University and renowned overseas universities, it focuses on the "choke point" technology of third-generation semiconductor silicon carbide crystal growth equipment. After completion, it can form an annual production capacity of 300,000 sets of core components for medium and low voltage power distribution and 300 single crystal growth equipment. Upon reaching full production, the annual sales are expected to be CNY 400 million, achieving 100% domestic substitution of high-end semiconductor equipment.
According to the official website, Changzhou Gengyun Electric Appliance Co., Ltd. is a limited liability company established through restructuring based on the former Wujin No.2 Electrical Appliance Factory (Changzhou Shenda Electrical Appliance Factory). This year, it produced about 60,000 units of various mechanical frames, with an output value of CNY 30 million. It is preparing to add two production lines to increase the production capacity to 100,000 units. It is expected that the production capacity will remain at about 150,000 units in the next three years, achieving the goal of an output value of CNY 100 million.
This article is published by [Expert Insights on Third-Generation Semiconductors], focusing on industry observation of third-generation semiconductors (silicon carbide and gallium nitride).