Recently, three more domestic companies/institutions have accelerated their 8-inch SiC layouts. The progress is as follows:
Advanced Semiconductor: The 8-inch SiC process production line has completed its upgrade and started operations. Multiple 8-inch chips have been delivered to leading automakers for trial verification;
Top Electronics: Completed the mass production of customized 8-inch SiC wafers, with a specific on-resistance Rsp as low as 1.8 mΩ·cm²;
Microelectronics R&D Institute (Hong Kong): The 8-inch SiC and GaN pilot lines are expected to be operational by the end of the year.
Advanced Semiconductor: 8-inch SiC Chips Delivered to Leading Automakers
On September 17, Hebei Sinocera Electronic Technology Co., Ltd. released a record form of investor relations activities. It provided explanations regarding the customer introduction and capacity ramp-up progress of its subsidiary Beijing Advanced Semiconductor's transition from a 6-inch to an 8-inch SiC wafer production line.
The announcement revealed that Beijing Advanced Semiconductor's 8-inch SiC process production line has completed its upgrade and started operations, and the development of the fifth-generation planar gate SiC MOSFET process has been completed. In addition, the first phase of the packaging and testing platform has been constructed, and the SiC high-voltage power module production line has successfully started operations.
In terms of customer introduction, Advanced Semiconductor has produced and delivered multiple 8-inch automotive-grade chips to leading automakers for trial verification. It is simultaneously advancing reliability verification with leading automakers, EV charger, and industrial power supply customers, and carrying out related work for PCN changes.
Regarding capacity ramp-up, Advanced Semiconductor is currently accelerating the installation and debugging of new equipment and process iteration optimization. It is simultaneously improving supporting capabilities such as KGD and wafer-level burn-in, gradually achieving yield rate improvement and capacity release, and steadily ramping up to the target capacity.
In March this year, Wang Chuanbao, Assistant to the General Manager of Advanced Semiconductor, stated in an interview with Expert Talk on Third-Generation Semiconductors that they achieved a doubling of SiC MOSFET shipments in 2025, with a significant increase in contract value. This was mainly driven by continuous repeat purchases and increased procurement volumes from major automaker clients, and also benefited from batch shipments in fields such as EV chargers, induction heating, and coating power supplies.
In 2026, Advanced Semiconductor will advance the development and mass production of the fifth-generation process for SiC MOSFETs on the 8-inch production line. At the same time, it will accelerate customer verification and market introduction of 8-inch SiC products, promoting batch sales among mainstream clients.
Top Electronics: Mass Production of 8-inch SiC Wafers Realized
Recently, Top Electronics revealed on its official WeChat account that, based on its independent design technology, it has recently completed the mass production of customized 8-inch SiC wafers, demonstrating advantages in key manufacturing metrics such as specific on-resistance, yield rate, and parameter consistency.
It is reported that this mass production is based on the XM4.0+ process platform and adopts Top Electronics' self-developed ultra-fine cell structure design. While optimizing the conduction performance under high-temperature working conditions, it simultaneously improves the dynamic switching characteristics of the devices. They also introduced the W-plug metal filling process, overcoming the difficulties in the metallization process during large-size wafer manufacturing, providing strong process support for diversified customized device solutions.
In terms of specific parameters, this mass production by Top Electronics achieved a tape-out yield rate of over 99%. The wafer-level measured specific on-resistance Rsp is as low as 1.8 mΩ·cm², VSD fluctuation is controlled within the ±0.1V range, and the VTH standard deviation is less than 0.1V. From the wafer-level measured statistical data, the standard deviations of VTH1, VSD, on-resistance, and other indicators are all maintained at extremely low levels.
Top Electronics stated that they will continuously iterate the 8-inch process platform, leveraging the advantages of large-size manufacturing to release capacity space. This will create favorable conditions for optimizing the comprehensive cost of batch delivery in the future, deepen customer-oriented customized development capabilities, and continuously refine product reliability and delivery capabilities.
Anhui Top Electronics Technology Co., Ltd., founded in October 2020, is a national high-tech enterprise focusing on wide-bandgap semiconductor power devices and application technology innovation. Headquartered in Wuhu, Anhui, it has established a packaging and testing base for SiC power modules in Huzhou with an annual production capacity of 300,000 sets. Its products have been introduced to benchmark enterprises in various fields such as NEVs, DC EV chargers, PV energy storage, data center power supplies, and consumer electronics.
Microelectronics R&D Institute (Hong Kong): 8-inch Pilot Line Expected to be Operational by Year-End
On September 16, John Lee, Chief Executive of the Hong Kong Special Administrative Region, delivered the 2026 Policy Address, emphasizing the need to advance innovation and technology and industrial development, and to establish the first National Manufacturing Innovation Center in Hong Kong, which will be led and operated by the Microelectronics R&D Institute.
The report further revealed that the Microelectronics R&D Institute has moved into the Yuen Long Microelectronics Center. Its two 8-inch pilot lines are being assembled at full speed, focusing on the R&D and trial production of third-generation semiconductor chip technologies, with the goal of becoming operational by the end of the year.
According to previous reports by Expert Talk on Third-Generation Semiconductors, the Microelectronics R&D Institute (MRDI) was established in September 2024 with construction funding of HKD 2.838 billion (approximately CNY 2.64 billion). Of this, HKD 2.478 billion (approximately CNY 2.3 billion) will be used to establish the pilot lines, and the remaining funds will cover operational expenses over five years.
In March 2025, the Microelectronics R&D Institute (MRDI) began setting up two 8-inch third-generation semiconductor pilot lines, responsible for the R&D and production of SiC and GaN, respectively. The original plan was to complete installation and debugging in 2025. Currently, this construction plan is expected to be realized this year.
In March this year, Chen Zhenghao, Chairman of the Microelectronics R&D Institute (MRDI), stated in an interview with Oriental Daily that since MRDI's establishment a year and a half ago, the team has expanded to over a hundred people and has begun discussing cooperative projects with enterprises. About five projects have been confirmed for advancement, and another ten are under review. The partners include enterprises from mainland China, Europe, and the United States, including SICC, a major SiC substrate manufacturer.
This article is published by Expert Talk on Third-Generation Semiconductors, focusing on industry observations of third-generation semiconductors (SiC and GaN).