In 2026, the power semiconductor sector can be summarized in one word: "surge". CR Micro fired the first shot on February 1, with a general price increase of over 10% for its full range of microelectronic products; Silan Microelectronics followed suit on March 1, raising prices for small-signal diodes and MOSFET chips by 10%; Infineon launched its first round of price adjustments on April 1, with an increase of 5%-15%. On July 1, nearly 20 power semiconductor companies worldwide collectively initiated a second round of price hikes: Infineon raised prices again by 10%-20%, CR Micro and Silan Microelectronics increased prices across the board by over 15%, Yangjie Technology raised prices by 10%-15%, StarPower increased prices for IGBT and SiC MOSFET modules by over 15%, and UMW Semiconductor raised prices by 15%-30% in one go. To date, over twenty power semiconductor companies at home and abroad have officially announced price increases. The delivery cycle for mainstream products has generally been extended to over 30 weeks, and for some high-voltage devices, an "allocation" model has even emerged, distributing supply based on customer importance. The underlying logic of this round of price hikes is no longer simple cost pass-through.
1. Volume and Price Surge Together: AI Computing Power Ignites the Super Cycle of Power Semiconductors
Power semiconductors are semiconductor devices for power conversion and control. From mobile phone chargers to NEV electronic control systems, and from photovoltaic inverters to AI data center power supply modules, almost all electrical equipment relies on them. However, in the past few years, this industry has just experienced a brutal price war in China, with the prices of some products dropping by more than 50% between 2022 and 2024. But the driving forces of this super boom cycle are completely different from the past. In the past, the boom cycle of power semiconductors was mainly driven by NEVs and photovoltaic energy storage, but this time, AI computing power has become the largest incremental variable. The latest report by Bank of America points out that the power consumption of AI servers is 3 to 5 times that of traditional servers, and the power consumption of data center racks is advancing from tens of kilowatts to 600kW or even 1MW. The number of MOSFETs, SiC, and GaN required for each GPU and each rack is multiplying. NVIDIA has updated and released the 800V HVDC architecture white paper, indicating that future data center power supplies will mainly rely on high-end gallium nitride and silicon carbide devices for power conversion. It is predicted that by 2030, the scale of power semiconductors related to AI data centers will reach $10.6 billion, accounting for a quarter of the overall market. Meanwhile, the capacity of 8-inch mature process nodes continues to shrink, with TSMC (Taiwan Semiconductor Manufacturing Company) and Samsung exiting 8-inch production lines; domestic foundries are also tilting part of their capacity towards memory chips, and AI chip production has occupied over 30% of wafer capacity originally allocated for power semiconductors. The explosive growth on the demand side and the rigid constraints on the supply side resonate, making this round of price hikes last until at least 2027.
2. Domestic Breakthrough: The Shift in the Landscape from "Involution" to "Taking a Seat at the Table"
In this super cycle, the most noteworthy change lies not in prices, but in the restructuring of the global competitive landscape. The latest global power semiconductor sales ranking released by the French market research firm Yole shows that Infineon still firmly holds the first place with a 17.7% market share, but the combined share of the three overseas giants has dropped from nearly 40% at its peak to around 33%. At the same time, five Chinese companies have collectively entered the global top 20 for the first time, with CR Micro, Silan Microelectronics, BYD Semiconductor, CRRC, and [to be supplemented with correct domestic enterprise] making the list. Third-generation semiconductors are becoming a key arena for domestic high-end development. BYD Semiconductor has launched the world's first 1500V high-voltage high-power silicon carbide chip that can be mass-produced for vehicle installation, achieving autonomous control of high-end automotive-grade products; Innoscience has become the only domestic Chinese gallium nitride company in NVIDIA's 800V system supplier list; the global market share of SICC's silicon carbide substrates has jumped to the first place; Silan Microelectronics' 8-inch SiC production line has officially started running, and upon reaching full capacity, it will form an annual production capacity of 720,000 wafers. The penetration rate of silicon carbide in 800V models has reached 77%. In 2026, the overall penetration rate of SiC in NEVs will reach 40%, and domestic substitution is advancing in depth from module assembly to the chip level.
3. "2026 Hardcore Power Device Award": Who Is the "Hardcore King" of the Year?
When power semiconductors transform from an "involution red ocean" to a "strategic scarce resource", and when the competition in AI computing power essentially becomes a competition in power supply efficiency and power density, who can truly define "hardcore" with technology, verify strength with mass production, and win recognition with market value in this super cycle? As one of the most influential selection events in the domestic semiconductor industry, the "Hardcore Chip Selection" by Chip Master has adhered to the "technical strength + mass production implementation + market value" evaluation system for many consecutive years, and has become an annual "chip" business card that domestic chip companies compete for. The following will showcase the "8th Hardcore Chip - Power Device Candidate Products":
Hangzhou Silan Microelectronics Co., Ltd. Hangzhou Silan Microelectronics Co., Ltd. is a high-tech enterprise specializing in IC chip design and the production of semiconductor microelectronics-related products. It has long focused on the R&D and manufacturing of power semiconductors and compound semiconductor devices, advanced analog circuits, and MEMS sensors. Its products are widely used in numerous fields such as automobiles, new energy, white goods, industrial control, laptops and mobile phones, AI servers, communications, humanoid robots, security electronics, and power electronics. The company has always adhered to the "Integrated Device Manufacturing" (IDM) development model, comprehensively connecting the entire industry chain of "chip design - chip manufacturing - chip packaging". The chip production line has achieved the leap "from 5-inch to 12-inch" and expanded from silicon-based production lines to compound production lines, making it one of the largest and most diverse IDM enterprises in terms of product technology categories in China.
SSM2R1PB12EZ1BTFM The SSM2R1PB12EZ1BTFM adopts Silan's self-developed GEN IV planar gate SiC chip, with four 5mm6mm chips in parallel per half-bridge, meeting the requirements for long-term 185℃ and short-term 200℃ junction temperature operation; it can cover a 250kW power demand in an extremely small volume of 98mm70mm, reducing the volume by 60% compared to miniHPD, with significantly leading power density; moreover, the product has a built-in temperature-sensitive diode for sampling, simplifying the temperature measurement scheme, ensuring high sampling accuracy while reducing system costs and improving response speed.
SCDP230R012NB2CPHC The SCDP230R012NB2CPHC is an ultra-high voltage silicon carbide MOSFET, with a VDS of up to 2300V and an on-resistance as low as 12mohm. Based on Silan's independently developed second-generation SiC MOSFET platform process, and paired with a TO-247-4L package optimized for 2300V high creepage distance, the product is widely applicable to rectification, inversion, and other application scenarios in fields such as wind power, photovoltaics, energy storage, AI, and power grids.
WeEn Semiconductors Co., Ltd. WeEn Semiconductors Co., Ltd. is a global leading enterprise focusing on power semiconductors, formerly the Standard Products business unit of NXP Semiconductors. WeEn combines advanced bipolar power technology with NXP's resource advantages in manufacturing and distribution channels in China. Its main products include thyristors/SCRs, silicon carbide devices, fast recovery diodes, TVS/ESD, IGBTs, and modules, which are widely used in consumer electronics, industrial control, renewable energy, and automotive fields. It owns over 100 patents (including 6 overseas patents), and its R&D investment has accounted for over 7% in the past two years. It ranks first in the global market share of thyristors and seventh in silicon carbide diodes (Omdia 2024 data), with products applied in many well-known global brands.
WeEn 750V Trench Gate SiC MOSFET WNSCT45075TT WeEn has officially launched a new generation of 750V trench gate SiC MOSFET, adopting various package forms such as TOLL, QDPAK, and DFN8*8. This series of products adopts a trench gate structure design. The main features of the product include a gate turn-on threshold voltage of over 4V, supporting 0V turn-off, and requiring no negative voltage drive to avoid false turn-on; it possesses industry-leading low on-resistance and high channel mobility, effectively reducing conduction and switching losses; while achieving high power density, it also strengthens the gate oxide reliability of the product and improves short-circuit withstand capability, enabling efficient and compact power supply designs to meet the demand for miniaturization of AI server power supplies.
Beijing Global Power Technology Co., Ltd. Beijing Global Power Technology Co., Ltd. is a leading enterprise in the industrialization of silicon carbide power devices in China, professionally dedicated to the R&D and manufacturing of silicon carbide devices and providing solutions. Headquartered in Beijing, it is an IDM enterprise with two silicon carbide chip wafer production lines. The company has 13 years of mass production experience in silicon carbide devices, covering six directions: R&D, manufacturing, process, quality control, application solutions, and sales. Global Power Technology's silicon carbide products cover various specifications such as 650V3300V (0.5A100A), and have been mass-produced and applied in multiple fields such as PC power supplies, photovoltaic inverters, charging modules, OBCs, and DC-DC converters, repeatedly winning industry outstanding product awards.
Discrete Device TO-247-6L G3M060450N9T This product is the world's first 4500V, 39A silicon carbide MOSFET with a chip area of only 0.39cm^2. The Vth is stable at 2.75V, and the Ron is as low as 60mΩ at Vg=18V; it has excellent parasitic parameters, with Crss of only 4.6pF, Coss=100pF, Ciss=7027pF, and Eoss=436uJ, which can significantly suppress high-voltage switching oscillations and losses. Relying on the independently developed terminal design invention patent (202610099504.6), it balances withstand voltage, conduction loss, and switching performance, filling the gap in international specifications for the same voltage and current. It is suitable for medium and high-voltage energy storage, solid-state transformers, and rail transit traction converters, realizing the miniaturization, high efficiency, and domestic substitution of high-voltage power equipment.
Shenzhen JSM Semiconductor Co., Ltd. JSM Semiconductor is a company specializing in the production of Hall magnetic sensor SoC chips, analog driver ICs, PMICs (AC-DC/DC-DC), MOSFETs, diodes and triodes, transistors, and single/dual/three/four-quadrant thyristors. JSMSEMI possesses a complete independent R&D system and has mastered multiple domestically leading key core technologies. It has developed various magnetic switch series chips, magnetic speed and direction sensor chips, linear sensor chips, and magnetic encoder chips, including 25V~700V gate driver IC chips, 3300V/5000V isolated gate driver IC chips, motor driver IC chips, intelligent power switches, and intelligent modules. It provides high-reliability power analog IC chips for terminal customers in market fields such as automotive electronics, photovoltaics and energy storage, data centers, and industrial control.
JSM2113S JSM2113S accepts logic input levels compatible with CMOS or LSTTL, down to 3.3V. The output has high current pulse capability, and its floating channel can be used to drive high-side N-channel power MOSFETs. Its floating channel supports a maximum operating voltage of 750V.
※ The above is a summary of some relevant enterprises, listed in no particular order. Comments are welcome for supplementation (WeChat: global360iot01)