On November 2, according to the official WeChat account of United Nova Technology (UNT), UNT-affiliated company Xinlian Dongli completed a Series C funding round of nearly CNY 2 billion.
The round was led by China Mobile Chain Leader Fund, with strategic investments from IEIT SYSTEMS, Yuanjing Capital, Sinopec Hydrogen Energy Fund, Naura Technology Nuohua Capital, and Jiangfeng Electronics. Following this financing, Xinlian Dongli’s shareholder matrix expanded further, incorporating industrial capital from telecommunications, computing power, grid, new energy, and automotive sectors.
United Nova Technology (UNT) stated that the entry of multiple industrial capitals from the AI infrastructure sector signals that while consolidating its leadership in automotive SiC, the company is establishing AI server power supplies as its next strategic growth curve.
Reviewing UNT’s development trajectory over the past three years, its progress in the SiC field has been remarkably rapid:
In 2023: UNT collaborated with upstream and downstream industry partners to establish Xinlian Dongli, focusing on the NEV market. By December of that year, UNT’s 6-inch SiC MOSFET production line exceeded a monthly output of 5,000 wafers.
In 2024: As automotive-grade SiC products accelerated in volume, UNT’s 8-inch SiC production line completed engineering batch off-line runs. The SiC process platform covered 650V to 1700V, and planar SiC MOSFETs underwent three generations of technology iteration within two years, achieving mass production.
In 2025: Entering the scale-up phase, 8-inch SiC MOSFETs achieved mass production shipments. SiC MOSFET installations surpassed 1 million units, securing design wins from multiple mainstream domestic and international automakers and Tier 1 suppliers.
While consolidating the automotive-grade market, UNT is accelerating expansion into AI and industrial energy. In the first half of 2025, revenue share from the AI sector was approximately 6%, rising to 8.02% for the full year.
In terms of product and market expansion, in November 2025, Xinlian Dongli launched its SiC G2.0 technology platform, covering both EV electric drive and high-efficiency power applications. The power version reduces switching losses by up to 30%, making it suitable for scenarios such as Solid State Transformers (SST) and High-Voltage Direct Current (HVDC) systems in AI data centers. In recent investor surveys, UNT clarified that for AI computing power supplies, the company can provide a complete system foundry solution comprising "power devices + isolation drivers + MCU + magnetic components," positioning it to benefit deeply from AI infrastructure construction.
Beyond Xinlian Dongli, two other major events occurred recently in third-generation semiconductor investment and financing:
In October 2026, iSABers completed a Pre-IPO funding round led by Weihao Chuangxin alongside Shanghai Xiangju and UNT, with Advanced Micro-Fabrication Equipment and several existing shareholders participating. This financing elevated iSABers to unicorn status, with funds primarily allocated to expanding manufacturing capacity for equipment and turnkey services. Its products are widely used in HBM high-bandwidth memory and 2.5D/3D advanced packaging, addressing challenges such as heterogeneous material bonding yield.
On October 29, 2026, Axiro invested in ThinSiC. Both parties signed a long-term commercial cooperation agreement to jointly advance the commercialization of high-voltage SiC power devices. ThinSiC is developing epitaxial layer lift-off technology aimed at skipping grinding steps and reusing substrates to reduce SiC device manufacturing costs. Axiro will leverage its parent company CG Power’s channels in India’s grid and railway traction sectors to promote the commercial deployment of this technology.